氢型丝光沸石催化剂催化α-蒎烯合成α-松油醇

在相转移助剂苄基三乙基氯化铵(BTEAC)存在下,以氢型丝光沸石(HM)为催化剂,原料α-蒎烯经开环、重排及水合反应一步法合成了α-松油醇。研究了各种因素对α-蒎烯转化率及α-松油醇收率的影响,采用5因素4水平L16(45)进行了正交实验,得出最佳的工艺条件:反应温度80℃,w(BTEAC)=15%,m(HM)∶m(α-蒎烯)=0.6,反应时间40h,m(乙酸乙酯)∶m(α-蒎烯)=0.9。在此条件下,α-蒎烯转化率为75.2%,α-松油醇收率为42.0%。用气相色谱-质谱联用仪对反应产物进行分析,共鉴定出14种化合物,主要成分为α-松油醇、α-蒎烯、柠檬烯、桉叶油素、异松油烯、龙脑等。实验得到的α-松油醇具有光学活性,旋光值[α]=+61°,同时香气纯正,可用于制作香料。     

对重油催化裂化反应历程的若干再认识——"新型多区协控重油催化裂化技术MZCC"的提出

基于对重油催化裂化反应历程的若干再认识,以高油剂混合能量短接触时间催化裂化为工艺基础,提出了进料强返混、反应平流推进、产物超快分离及化学汽提的分区协同控制新理念和实现分区协同控制反应的新技术.并且为实现高油剂混合能量短接触时间催化裂化提出了新型反应器结构;同时对汽提段的功能进行了拓展与强化,提出了"化学汽提器"的概念.分区协同控制反应的技术以进一步提高轻质油收率和实现装置长周期运行为目标,有着重要的理论和实际意义.     

φ90mm低铬铸球开裂失效分析

φ90mm低铬铸球在做落球试验中过早出现开裂现象。将该铸球材质进行化学成分分析、力学性能测定及金相组织观察。分析结果表明，该铸球的材料中夹杂物含量较高，其硬度值又偏高，铸球内部又存在严重缩松及其铸态组织中存在大量奥氏体转变产物，致使铸球在落球试验中过早开裂。经过工艺措施的改进，解决了铸球出现过早开裂的现象。     

用CMOS工艺实现VSR光电集成接收机的途径

介绍了10Gbit／s速率的甚短距离光传输系统VSR(Very Short Reach)中的接收机。分析了几种有希望用于VSR系统的CMOS工艺兼容的光电探测器。提出用CMOS电路实现VSR光电集成(OEIC)接收机的可能性和实现方法。     

16信道0.35μmCMOS/VCSEL光发射模块

研究了垂直腔面发射激光器 (VCSEL)及其列阵器件的光谱特性、调制特性、高频特性及与微电子电路的兼容性 ,将 1× 16的VCSEL与CMOS专用集成电路进行多芯片组装 (MCM ) ,混合集成为 16信道VCSEL光发射功能模块 .测试过程中 ,功能模块的光电特性及其均匀性良好 ,测量的 - 3dB频带宽度大于 2GHz.     

共面波导有限金属厚度效应的研究

用保角变换法对共面波导金属厚度效应进行了理论分析，编制了相应的计算机程序，给出了数值解，并对此进行了多元曲线拟合，导出了考虑金属厚度后的形状比k、有效介电常数、特征阻抗、损耗的闭定表达式。用此修正表达式求得特征阻抗及损耗的数值解，并与K．C．格普塔的修正值及实验测量值进行了详细比较，结果表明此修正公式与实验值相符较好。     

反铁磁晶体的红外频率特性

研究了红外频段非线性s偏振表面波在反铁磁晶体和电介质交界面上的频率特性，求出了非线性色散方程，揭示了非线性s偏振表面波存在一个临界频率，低于这个频率，非线性s偏振表面波的频率范围，发现功率不再是决定导波频率范围的唯一因素，两种材料的介电常数比在这里起了至关重要的作用。     

Analysis of the time response of multiconductor transmission lineswith frequency-dependent losses by the method ofconvolution-characteristics

A new method for analysis of the time response of multiconductor transmission lines with frequency-dependent losses is presented. This method can solve the time response of various kinds of transmission lines with arbitrary terminal networks. Particularly, it can analyze nonuniform lines with frequency-dependent losses, for which no effective method for analyzing their time response exists. This method starts from the frequency-domain telegrapher's equations. After decoupling and inversely Fourier transforming, then a set of decoupled time-domain equations including convolutions are given. These equations can be solved with the characteristic method. The results obtained with this method are stable and accurate. Two examples are given to illustrate the application of this method to various multiconductor transmission lines     

Modeling ion implantation of HgCdTe

Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant doping profile is n⁺/n^-/p, where the n⁺ region is near the surface and roughly coincides with the implant damage, the n^- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released, they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing conditions, including implant dose, annealing temperature, and doping background.